SSI2154 800ma, 20v dual n-channel mosfet elektronische bauelemente 18-oct-2012 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. rohs compliant product a suffix of -c specifies halogen & lead-free descriptions the SSI2154 is n-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent rds (on)with low gate c harge. this device is suitable for use in dc-dc conversion , load switch and level shift. mechanical data trench technology supper high density cell design excellent on resistance extremely low threshold voltage application dc-dc converter circuit load switch device marking: package information package mpq leader size sot-563 3k 7 inch maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit 10s steady state drain C source voltage v ds 20 v gate C source voltage v gs 6 v continuous drain current 1 t a = 25c i d 0.88 0.8 a t a = 70c 0.71 0.64 power dissipation 1 t a = 25c p d 0.37 0.3 w t a = 70c 0.23 0.19 continuous drain current 2 t a = 25c i d 0.76 0.69 a t a = 70c 0.6 0.55 power dissipation 2 t a = 25c p d 0.27 0.22 w t a = 70c 0.17 0.14 pulsed drain current 3 i dm 1.4 a maximum junction-to-lead r jl 260 c / w operating junction & storage temperature range t j , t stg -55~150 c sot-563 54 e f j b c d g a h ref. millimeter ref. millimeter min. max. min. m ax. a 1.50 1.70 f 0.09 0.16 b 1.50 1.70 g 0.45 0.55 c 0.525 0.60 h 0.17 0.27 d 1.10 1.30 j 0.10 0.30 e - 0.05
SSI2154 800ma, 20v dual n-channel mosfet elektronische bauelemente 18-oct-2012 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. thermal resistance ratings note: 1. surface mounted on fr4 board using 1 square inch pad size, 1oz copper. 2. surface mounted on fr4 board using minimum pad s ize, 1oz copper 3. repetitive rating, pulse width limited by juncti on temperature, tp=10 s, duty cycle=1% 4. repetitive rating, pulse width limited by juncti on temperature tj=150c. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage v (br)dss 20 - - v v gs =0, i d =250 a zero gate voltage drain current i dss - - 1 a v ds =16v, v gs =0 gate-source leakage i gss - - 5 a v ds =0 , v gs = 5v gate-threshold voltage v gs(th) 0.45 0.58 0.85 v v ds =v gs, i d =250 a drain-source on resistance r ds(on) - 220 310 m v gs =4.5v, i d =0.55a - 260 360 v gs =2.5v, i d =0.45a - 320 460 v gs =1.8v, i d =0.35a forward transconductance g fs - 2 - s v ds =5v, i d = 0.55a body-drain diode ratings diode forward onCvoltage v sd 0.5 0.7 1.5 v i s =350ma, v gs =0 dynamic characteristics input capacitance c iss - 60 - pf v ds =10v, v gs =0, f=100khz output capacitance c oss - 11 - reverse transfer capacitance c rss - 7.5 - total gate charge q g(tot) - 1.15 - nc v ds =10v, v gs =4.5v, i d =0.55a threshold gate charge q g(th) - 0.06 - gate-to-source charge q gs - 0.15 - gate-to-drain charge q gd - 0.23 - turn-on delay time t d(on) - 22 - ns v dd =10v, i d =0.55a, v gs =4.5v, r g =6 . rise time t r - 80 - turn-off delay time t d(off) - 700 - fall time t f - 380 - parameter symbol rating unit typ. max. single operation junction-to-ambient thermal resistance 1 t Q 10s r ja 285 335 c / w steady state 340 405 junction-to-ambient thermal resistance 2 t Q 10s r ja 385 450 steady state 455 545 junction-to-case thermal resistance steady state r jc 260 300 dual operation junction-to-ambient thermal resistance 1 t Q 10s r ja 315 365 c / w steady state 370 440 junction-to-ambient thermal resistance 2 t Q 10s r ja 420 490 steady state 505 585 junction-to-case thermal resistance steady state r jc 265 305
SSI2154 800ma, 20v dual n-channel mosfet elektronische bauelemente 18-oct-2012 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
SSI2154 800ma, 20v dual n-channel mosfet elektronische bauelemente 18-oct-2012 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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